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Volumn 563, Issue , 2014, Pages 28-31

Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer deposition

(8) Pietruszka, R a Luka, G a Witkowski, B S a Kopalko, K a Zielony, E b Bieganski, P b Placzek Popko, E b Godlewski, M a,c

a INSTITUTE OF PHYSICS (Poland)

b WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

c CARDINAL STEFAN WYSZY SKI UNIVERSITY (Poland)

Author keywords

Atomic layer deposition; Heterojunction; Silicon; Solar cells; Zinc oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; HETEROJUNCTIONS; SILICON; SOLAR CELLS; THIN FILMS; ZINC OXIDE;

ATOMIC LAYER; BEST RESPONSE; N-TYPE ZINC OXIDES; OPTIMAL PERFORMANCE; PHOTOVOLTAIC; PHOTOVOLTAIC PROPERTY; SILICON SUBSTRATES; TRANSPARENT ELECTRODE; ZNO; ZNO FILMS;

ELECTRIC PROPERTIES; ATOMIC LAYER DEPOSITION;

EID: 84902279376 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.10.110 Document Type: Article

Times cited : (14)

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