메뉴 건너뛰기




Volumn 12, Issue 11, 2012, Pages 5448-5454

Unraveling quantum hall breakdown in bilayer graphene with scanning gate microscopy

Author keywords

Graphene; quantum Hall effect; quantum percolation; resistance metrology; scanning gate microscopy

Indexed keywords

BI-LAYER; FILLING FACTOR; HALL CONDUCTANCE; LOCALIZED STATE; LOW TEMPERATURES; MAXIMUM DENSITY; MODEL-BASED OPC; QUANTUM HALL; QUANTUM METROLOGY; QUANTUM PERCOLATION; RESPONSIVITY; SADDLE POINT; SCANNING GATE MICROSCOPY; SCANNING PROBES; TIP-INDUCED;

EID: 84869193529     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3015395     Document Type: Article
Times cited : (53)

References (57)
  • 17
    • 84870445566 scopus 로고    scopus 로고
    • Woszczyna, M.; Friedemann, M.; Götz, M.; Pesel, E.; Pierz, K.; Weimann, T.; Ahlers, F. J. arXiv:1203.1798v1
    • Woszczyna, M.; Friedemann, M.; Götz, M.; Pesel, E.; Pierz, K.; Weimann, T.; Ahlers, F. J. arXiv:1203.1798v1.
  • 56
    • 84870445019 scopus 로고    scopus 로고
    • Lee, D.; Skakalova, V.; Weitz, R. T.; von Klitzing, K.; Smet, J. H. arXiv:1204.4177, 2012
    • Lee, D.; Skakalova, V.; Weitz, R. T.; von Klitzing, K.; Smet, J. H. arXiv:1204.4177, 2012.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.