Defect-aware process margin for chemo-epitaxial directed selfassembly lithography using simulation method based on self-consistent field theory

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 9049, Issue , 2014, Pages

  Koder, Katsuyoshi ^a   Sato, Hironobu ^a   Kanai, Hideki ^a   Seino, Yuriko ^a   Kihara, Naoko ^a   Kasahara, Yusuke ^a   Kobayashi, Katsutoshi ^a   Miyagi, Ken ^a   Minegishi, Shinya ^a   Yatsuda, Koichi ^a   Fujiwara, Tomoharu ^a   Hirayanagi, Noriyuki ^a   Kawamonzen, Yoshiaki ^a   Azuma, Tsukasa ^a  

^a EUVL Infrastructure Development Center Inc   (Japan)

Author keywords

Defect analysis; Defect aware process margin; Directed self assembly; Lithography; Self consistent field theory

Indexed keywords

LITHOGRAPHY; MEAN FIELD THEORY; MOLECULAR ORBITALS; SELF ASSEMBLY;

DEFECT ANALYSIS; DIRECTED SELF-ASSEMBLY; DIRECTED SELF-ASSEMBLY LITHOGRAPHIES; ENERGY DIFFERENCES; META-STABLE STATE; PROCESS MARGINS; RIGOROUS SIMULATION; SELF CONSISTENT FIELD THEORY;

DEFECTS;

EID: 84902094454     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2046159     Document Type: Conference Paper

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