Infrared reflectance and electrical conductivity of β-Ga2O3

Physica Status Solidi (A) Applied Research

Volumn 193, Issue 1, 2002, Pages 187-195

  Villora E G ^a   Morioka, Y ^b   Atou, T ^a   Sugawara, T ^a   Kikuchi, M ^a   Fukuda, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH; DAMPING; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; INFRARED SPECTROSCOPY; LEAST SQUARES APPROXIMATIONS; MIXTURES; PARTIAL PRESSURE; SINGLE CRYSTALS;

GALLIUM OXIDE; HALL COEFFICIENT; INFRARED REFLECTANCE; OSCILLATOR STRENGTH; PLASMA FREQUENCY; POLARIZED REFLECTANCE SPECTRA;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036747793     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200209)193:1<187::AID-PSSA187>3.0.CO;2-1     Document Type: Article

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