Light converting inorganic phosphors for white light-emitting diodes

Materials

Volumn 3, Issue 3, 2010, Pages 2172-2195

  Chen, Lei ^a,b   Lin, Chun Che ^a   Yeh, Chiao Wen ^a   Liu, Ru Shi ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b HEFEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Color rendering index (Ra); Light emitting diode (LED); Luminescence efficiency; Phosphors; Thermal stability

Indexed keywords

ABSORPTION AND EMISSIONS; COLOR RENDERING INDEX; HIGH COLOR RENDERING INDEX; HIGH THERMAL STABILITY; LUMINESCENCE EFFICIENCIES; POLYMER LIGHT-EMITTING DIODES; WHITE LIGHT EMITTING DIODES; WHITE LIGHTEMITTING DIODES (WLEDS);

CHEMICAL ELEMENTS; COLOR; COLOR IMAGE PROCESSING; DIODES; ENERGY EFFICIENCY; LIGHT EMISSION; LIGHT SOURCES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTOR DIODES; THERMODYNAMIC STABILITY;

PHOSPHORS;

EID: 78649237050     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma3032172     Document Type: Review

References (33)

1. Henini, M. The blue laser diode: The complete story (2nd and extended edition): S. Nakamura, S. Pearton, G. Fasol; Springer-Verlag Berlin Heidelberg New York, 368 pages, ISBN: 3-540-66505- Microelectr. J. 2001, 32, 177.
2. Kovac, J.; Peternai, L.; Lengyel, O. Advanced light emitting diodes structures for optoelectronic applications. Thin Solid Films 2003, 433, 22-26.
3. Nakamura, S.; Senoh, M.; Mukai, T. P-GaN/N-InGaN/N-GaN double-heterostructure blue-lightemitting diodes. Jpn. J. App. Phys. 1993, 32, L8-L11.
4. Nakamura, S. InGaN-based laser diodes (In Japanese). Nikkei Electron. 1994, 602, 93.
5. Nakamura, S.; Mukai, T.; Senoh, M. Candela-class high-brightness InGaN/AlGaN doubleheterostructure blue-light-emitting diodes. Appl. Phys. Lett. 1994, 64, 1687-1689.
6. Nakamura, S.; Fasol, G. The Blue Laser Diode: GaN Based Light Emitters and Lasers; Springer: Berlin, Germany, 1997; p. 216.
7. Liu, J.; Lian, H.; Sun, J.; Shi, C. Characterization and properties of green emitting Ca3SiO4Cl2:Eu2+ powder phosphor for white light-emitting diodes. Chem. Lett. 2005, 34, 1340-1341.
8. Schubert, E.F.; Kim, J.K. Solid-state light sources getting smart. Science 2005, 308, 1274-11278.
9. Liu, R.S.; Liu, Y.H.; Bagkar, N.C.; Hu, S.F. Enhanced luminescence of SrSi2O2N2:Eu2+ phosphors by codoping with Ce3+, Mn2+, and Dy3+ ions. Appl. Phys. Lett. 2007, 91, 061119.
10. Mancic, L.; Marinkovic, K.; Marinkovic, B.A.; Dramicanin, M.; Milosevic, O. YAG:Ce3+ nanostructured particles obtained via spray pyrolysis of polymeric precursor solution. J. Eur. Ceram. Soc. 2010, 30, 577-582.
11. Li, Y.X.; Min, Y.L.; Zhou, X.Z.; You, X.Z. Coating and stability of YAG:Ce phosphor synthesized using inorganic-organic hybrid gel method. Chin. J. Inorg. Chem. 2003, 19, 1169-1174.
12. Lu, C.H.; Hong, H.C.; Jaganathan, R. Sol-gel synthesis and photoluminescent properties of cerium-ion doped yttrium aluminium garnet powders. J. Mater. Chem. 2002, 12, 2525-2530.
13. 3+ (Re = Ce, Sm, Tb) phosphors. Mater. Lett. 2002, 56, 628-636.
14. Shi, S.K.; Wang, J.Y. Combustion synthesis of Eu3+ activated Y3Al5O12 phosphor nanoparticles. J. Alloys Compounds 2001, 327, 82-86.
15. Larson, A.C.; Von Dreele, R.B. Generalized Structure Analysis System (GSAS); Los Alamos National Laboratory Report LAUR 86-748; Los Alamos National Laboratory: Los Alamos, NM, USA, 1994.
16. Chiang, C.C.; Tsai, M.S.; Hon, M.H. Luminescent properties of cerium-activated garnet series phosphor: Structure and temperature effects. J. Electrochem. Soc. 2008, 155, B517-B520.
17. Jacobs, R.R.; Krupke, W.F.; Weber, M.F. Measurement of excited-state-absorption loss for Ce3+ in Y3Al5O12 and implications for tunable 5d→4f rare-earth lasers. Appl. Phys. Lett. 1978, 33, 410-412.
18. Dong, Y.; Zhou, G.; Xu, J.; Zhao, G.; Su, F.; Su, L.; Zhang, G.; Zhang, D.; Li, H.; Si, J. Luminescence studies of Ce:YAG using vacuum ultraviolet synchrotron radiation. Mater. Res. Bull. 2006, 41, 1959-1963.
19. Catti, M.; Gazzoni, G.; Ivaldi, G. Structures of twinned β-Sr2SiO4 and of α'-Sr1.9Ba0.1SiO4. Acta Crystallogr. C 1983, 39, 29-34.
20. Höppe, H.A.; Lutz, H.; Morys, P.; Schnick, W.; Seilmeier, A. Luminescence in Eu2+-doped Ba2Si5N8: Fluorescence, thermoluminescence, and upconversion. J. Phys. Chem. Solids 2000, 61, 2001-2006.
21. van Krevel, J.W.H.; Hintzen, H.T.; Metselaar, R.; Meijerink, A. Long wavelength Ce3+ emission in Y-Si-O-N materials. J. Alloys Compounds 1998, 268, 272-277.
22. van Krevel, J.W.H.; van Rutten, J.W.T.; Mandal, H.; Hintzen, H.T.; Metselaar, R. Luminescence properties of terbium-, cerium-, or europium-doped α-sialon materials. J. Solid State Chem. 2002, 165, 19-24.
23. Xie, R.J.; Mitomo, M.; Uheda, K.; Xu, F.F.; Akimune, Y. Preparation and luminescence spectra of Calcium- and Rare-Earth (R = Eu, Tb, and Pr)-codoped α-SiAlON ceramics. J. Am. Ceram. Soc. 2002, 85, 1229-1234.
24. Uheda, K.; Takizawa, H.; Endo, T.; Yamane, H.; Shimada, M.; Wang, C.M.; Mitomo, M. Synthesis and luminescent property of Eu3+-doped LaSi3N5 phosphor. J. Lumin. 2000, 87-89, 967-969.
25. Li, Y.Q.; van Steen, J.E.J.; van Krevel, J.W.H.; Botty, G.; Delsing, A.C.A.; DiSalvo, F.J.; de With, G.; Hintzen, H.T. Luminescence properties of red-emitting M2Si5N8:Eu2+ (M = Ca, Sr, Ba) LED conversion phosphors. J. Alloys Compd. 2006, 417, 273-279.
26. Huppertz, H.; Schenick, W. Eu2Si5N8 and EuYbSi4N7. The first nitridosilicates with a divalent rare earth metal. Acta Crystallogr. C 1997, 53, 1751-1753.
27. Duan, C.J.; Otten, W.M.; Delsing, A.C.A.; Hintzen, H.T. Preparation and photoluminescence properties of Mn2+-activated M2Si5N8 (M = Ca, Sr, Ba) phosphors. J. Solid State Chem. 2008, 181, 751-757.
28. Piao, X.; Horikawa, T.; Hanzawa, H.; Machida, K.I. Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination, Appl. Phys. Lett. 2006, 88, 161908.
29. Sohn, K.S.; Lee, S.; Xie, R.J.; Hirosaki, N. Time-resolved photoluminescence analysis of twopeak emission behavior in Sr2Si5N8:Eu2+. Appl. Phys. Lett. 2009, 95, 121903.
30. Huang, P.; Cui, C.E; Wang, S. Synthesis and characterization of Sr3Al2O6:Eu2+, Dy3+ phosphors prepared by sol-gel-combustion processing. Chin. Phys. B 2009, 18, 4524.
31. 2+, for white light-emitting diodes. Electrochem. Solid-State Lett. 2006, 9, H22-H25.
32. 4 for white light emitting diode. Phy. Status Solidi A 2006, 203, 2712-2717.
33. 3+ phosphor: Structure, photoluminescence, and application in white LEDs. Chem. Mater. 2008, 20, 6704-6714.