Reconstruction of the β-Ga2O3 (100) cleavage surface to hexagonal GaN after NH3 nitridation

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 462-468

  Villora, Encarnación G ^a   Shimamura, Kiyoshi ^a   Aoki, Kazuo ^b   Ichinose, Noboru ^a  

^a WASEDA UNIVERSITY   (Japan)

^b Koha Co Ltd   (Japan)

Author keywords

A1. Surface structure; B2. Semiconducting gallium compounds

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HALL EFFECT; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE PHENOMENA; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAPS; LATTICE MISMATCH; NITRIDATION; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE;

EID: 4544303296     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.045     Document Type: Article

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