Evidence for O2p hole-driven conductivity in La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films

Physical Review Letters

Volumn 79, Issue 17, 1997, Pages 3230-3233

  Ju, H L ^a   Sohn, H C ^a   Krishnan, Kannan M ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; LANTHANUM COMPOUNDS; STOICHIOMETRY; THIN FILMS;

DIVALENT DOPING; DOUBLE EXCHANGE MECHANISM; LANTHANUM STRONTIUM MANGANATE;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0031588275     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.3230     Document Type: Article

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