Design and performance evaluation of overcurrent protection schemes for silicon carbide (SiC) power MOSFETs

IEEE Transactions on Industrial Electronics

Volumn 61, Issue 10, 2014, Pages 5570-5581

  Wang, Zhiqiang ^a   Shi, Xiaojie ^a   Xue, Yang ^a   Tolbert, Leon M ^a   Wang, Fei ^a   Blalock, Benjamin J ^a  

^a University of Tennessee   (United States)

Author keywords

Desaturation; overcurrent protection; silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs); solid state circuit breaker (SSCB)

Indexed keywords

ELECTRIC CIRCUIT BREAKERS; MOSFET DEVICES; OVERCURRENT PROTECTION;

DE-COUPLING CAPACITANCE; DESATURATION; DESIGN CONSIDERATIONS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PROTECTION-CIRCUIT PARAMETER; SILICON CARBIDES (SIC); SOLID-STATE CIRCUIT BREAKERS; TEMPERATURE DEPENDENT;

SILICON CARBIDE;

EID: 84900522478     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2013.2297304     Document Type: Article

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