Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications

2012 IEEE Energytech, Energytech 2012

Volumn , Issue , 2012, Pages

  Kaplar, R J ^a   Marinella, M J ^a   DasGupta, S ^a   Smith, M A ^a   Atcitty, S ^a   Sun, M ^b   Palacios, T ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge Trapping; Galium Nitride; HEMT; Power MOSFET; Silicon Carbide

Indexed keywords

ALGAN/GAN HEMTS; BIAS CONDITIONS; CURRENT COLLAPSE; DC CONDITIONS; GAN-BASED DEVICES; HIGH TEMPERATURE; JUNCTION TEMPERATURES; MOSFETS; OVER CURRENT; OVER-VOLTAGES; POST-SILICON; POWER DEVICES; POWER MOSFET; POWER TRANSISTORS; RENEWABLE ENERGIES; RENEWABLE ENERGY APPLICATIONS; ROOM TEMPERATURE; SI-BASED; SMART GRID; SPECIFIC NATURE; SWITCHING DEVICES; TIME CONSTANTS; WIDE-BAND-GAP SEMICONDUCTOR;

CHARGE TRAPPING; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; RELIABILITY;

SILICON CARBIDE;

EID: 84868544073     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EnergyTech.2012.6304627     Document Type: Conference Paper

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