SiC MOSFET reliability update

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1073-1076

  Das, Mrinal K ^a   Haney, Sarah ^a   Richmond, Jim ^a   Olmedo, Anthony ^a   Zhang, Jon ^a   Ring, Zoltan ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Gate oxide; HTGB; MOS capacitor; MOSFET; MTTF; Reliability; TDDB

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); MOS CAPACITORS; MOS DEVICES; RELIABILITY; SILICON CARBIDE;

GATE OXIDE; HTGB; MOS-FET; MTTF; TDDB;

MOSFET DEVICES;

EID: 84861359958     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1073     Document Type: Conference Paper

References (6)

1. M. Maranowski and J.A. Cooper, Jr., Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC, IEEE Trans on Electron Devices, 46 (1999) 520-524.
2. 2 Grown on p-type 4H-SiC, IEEE Electron Device Letters, 19 (1998) 279-281.
3. B. Yeates, IEEE Trans. Electron Devices, 45 (1998) 939.
4. Information on http://www.jedec.org/sites/default/files/docs/JESD92.pdf
5. Dr. John S. Suehle, NIST, private communication.
6. Information on http://www.jedec.org