Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 1859-1864

  Othman, D ^a,b,c   Berkani, M ^b   Lefebvre, S ^b   Ibrahim, A ^c   Khatir, Z ^c   Bouzourene, A ^a  

^a THALES   (France)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITÉ GUSTAVE EIFFEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AERONAUTICS APPLICATIONS; COMPARISON STUDY; EXPERIMENTAL MEASUREMENTS; MOS-FET; POWER TRANSISTORS; SIC MOSFET; TRANSIENT PERFORMANCE;

AERODYNAMICS; POWER ELECTRONICS; SILICON CARBIDE; TRANSISTORS;

MOSFET DEVICES;

EID: 84866731871     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.078     Document Type: Article

References (9)

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