Evaluation of 600 v cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Volumn , Issue , 2013, Pages 3571-3578

  Zhang, Weimin ^a   Xu, Zhuxian ^a   Zhang, Zheyu ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Blalock, Benjamin J ^a  

^a University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERIZATION; EFFICIENCY CURVES; GALLIUM NITRIDES (GAN); LLC RESONANT CONVERTER; PERFORMANCE LIMITS; STATIC CHARACTERIZATION; SWITCHING PERFORMANCE; TURN-OFF LOSS;

DESIGN; ENERGY CONVERSION; GALLIUM ALLOYS; SILICON;

GALLIUM NITRIDE;

EID: 84891102455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2013.6647171     Document Type: Conference Paper

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