The dV/dt capability of MOS-gated thyristors

IEEE Transactions on Power Electronics

Volumn 13, Issue 4, 1998, Pages 660-666

  Venkataraghavan, P ^a   Baliga, B Jayant ^a,b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b IEEE

Author keywords

MOS gate; Switching; Thyristors

Indexed keywords

MOS DEVICES; SWITCHING CIRCUITS;

MOS GATE;

THYRISTORS;

EID: 0032121655     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.704134     Document Type: Article

References (9)

1. B. J. Baliga, Power Semiconductor Devices Boston, MA: PWS, 1996.
2. _, "Enhancement and depletion mode vertical channel MOS-gated thyristors," Electron. Lett., vol. 15, pp. 645-647, 1979.
3. V. A. K. Temple, "MOS controlled thyristors - A new class of power devices," IEEE Trans. Electron Devices, vol. ED-33, pp. 1609-1618, 1986.
4. B. J. Baliga, "The MOS-gated emitter switched thyristor," IEEE Electron Device Lett., vol. 11, pp. 1619-1623, 1990.
5. M. Nandakumar, B. J. Baliga, M. S. Shekar, S. Tandon, and A. Reisman, "A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance," IEEE Electron Device Lett., vol. 12, pp. 227-229, 1991.
6. B. J. Baliga, M. S. Adler, P. V. Gray, R. Love, and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device," in IEEE Int. Electron Devices Meet. Dig., 1982, pp. 264-267.
7. E. Cretu, A. Silard, M. Duta, and D. Poenar, "The dV/dt capability of power MOSFET's and merged bipolar-MOS devices," EPE-MADEP Dig., pp. 138-141, 1991.
8. Critical Rate of Rise of Off-State Voltage Test Method, EIA-NEMA Standard, vol. RS-397, pp. 148-149, 1979.
9. General Electric SCR Manual, Auburn, NY, 1974.