New physical insights on power MOSFET switching losses

IEEE Transactions on Power Electronics

Volumn 24, Issue 2, 2009, Pages 525-531

  Xiong, Yali ^a,b   Sun, Shan ^a   Jia, Hongwei ^a   Shea, Patrick ^a   John Shen, Z ^a  

^a University of Central Florida   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Power converters; Power MOSFET; Switching power loss

Indexed keywords

MODELS; POWER CONVERTERS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING;

EXISTING METHODS; GATE CHARGES; JUNCTION TEMPERATURES; MODELING AND MEASUREMENTS; MOS FETS; PHYSICALLY BASED; POWER ELECTRONICS CIRCUITS; POWER LOSS; POWER MOSFET; SEMI-CONDUCTOR DEVICE MODELING; SWITCHING LOSS; SWITCHING POWER LOSS; SWITCHING PROCESS; SWITCHING TIME; VOLTAGE TRANSITIONS;

MOSFET DEVICES;

EID: 61549120337     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2008.2006567     Document Type: Article

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