Positive gate bias stress instability of carbon nanotube thin film transistors

Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

  Lee, Sang Won ^a   Lee, Si Young ^a   Lim, Seong Chu ^a   Kwon, Young Dong ^b   Yoon, Joo Sun ^b   Uh, Keehan ^b   Lee, Young Hee ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATOR; GATE-BIAS STRESS; POSITIVE GATE BIAS; RANDOM NETWORK; ROOM TEMPERATURE; SI DEVICES; STRETCHED EXPONENTIAL; THRESHOLD VOLTAGE SHIFTS;

HAFNIUM OXIDES; THIN FILM TRANSISTORS;

CARBON NANOTUBES;

EID: 84864660584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4740084     Document Type: Article

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