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Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework

(3) Hekmatshoar, Bahman a Wagner, Sigurd a Sturm, James C a

a Princeton University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON THIN-FILM TRANSISTOR; DC OPERATION; DEGRADATION MECHANISM; DEPOSITION PROCESS; GATE FIELD; HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); TWO-REGIME;

AMORPHOUS FILMS; DEGRADATION; ELECTRIC FIELDS; ELECTRIC RESISTANCE; HYDROGEN; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 70349929039 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3238559 Document Type: Article

Times cited : (30)

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