Evidence of distributed robust surface current flow in 3D topological insulators

Physical Review X

Volumn 4, Issue 1, 2014, Pages

  Lee, Janghee ^a   Lee, Jae Hyeong ^a   Park, Joonbum ^a   Kim, Jun Sung ^a   Lee, Hu Jong ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Condensed matter physics; Electronics; Topological insulators

Indexed keywords

CONDENSED MATTER PHYSICS; ELECTRONIC EQUIPMENT; TOPOLOGY;

BOTTOM SURFACES; CONDUCTING CHANNELS; CONDUCTING STATE; CRYSTALLINE FLAKE; EXPERIMENTAL EVIDENCE; MEASUREMENTS OF; SURFACE CURRENT; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS;

EID: 84900297576     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.4.011039     Document Type: Article

References (72)

1. 3 with a Single Dirac Cone on the Surface, Nat. Phys. 5, 438 (2009).
2. D. Hsieh, D. Qian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava, and M. Z. Hasan, A Topological Dirac Insulator in a Quantum Spin Hall Phase, Nature (London) 452, 970 (2008).
3. D. Hsieh, Y. Xia, L. Wray, D. Qian, A. Pal, J. H. Dil, J. Osterwalder, F. Meier, G. Bihlmayer, C. L. Kane, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Observation of Unconventional Quantum Spin Textures in Topological Insulators, Science 323, 919 (2009).
4. 3, Science 325, 178 (2009).
5. D. Hsieh, Y. Xia, D. Qian, L. Wray, J. H. Dil, F. Meier, J. Osterwalder, L. Patthey, J. G. Checkelsky, N. P. Ong, A. V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, A Tunable Topological Insulator in the Spin Helical Dirac Transport Regime, Nature (London) 460, 1101 (2009).
6. L. Fu, C. L. Kane, and E. J. Mele, Topological Insulators in Three Dimensions, Phys. Rev. Lett. 98, 106803 (2007).
7. J. E. Moore and L. Balents, Topological Invariants of Time-Reversal-Invariant Band Structures, Phys. Rev. B 75, 121306 (2007).
8. M. S. Bahramy, P. D. C. King, A. de la Torre, J. Chang, M. Shi, L. Patthey, G. Balakrishnan, P. Hofmann, R. Arita, N. Nagaosa, and F. Baumberger, Emergent Quantum Confinement at Topological Insulator Surfaces, Nat. Commun. 3, 1159 (2012).
9. 2Te, Phys. Rev. Lett. 109, 166802 (2012).
10. X.-L. Qi, R. Li, J. Zang, and S.-C. Zhang, Inducing a Magnetic Monopole with Topological Surface States, Science 323, 1184 (2009).
11. B. Seradjeh, J. E. Moore, and M. Franz, Exciton Condensation and Charge Fractionalization in a Topological Insulator Film, Phys. Rev. Lett. 103, 066402 (2009).
12. L. Fu and C. L. Kane, Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator, Phys. Rev. Lett. 100, 096407 (2008).
13. R. Yu, W. Zhang, H.-J. Zhang, S.-C. Zhang, X. Dai, and Z. Fang, Quantized Anomalous Hall Effect in Magnetic Topological Insulators, Science 329, 61 (2010).
14. 3: A Comparison of Photoemission and Shubnikov-de Haas Measurements, Phys. Rev. B 81, 205407 (2010).
15. J. G. Analytis, R. D. McDonald, S. C. Riggs, J.-H. Chu, G. S. Boebinger, and I. R. Fisher, Two-Dimensional Surface State in the Quantum Limit of a Topological Insulator, Nat. Phys. 6, 960 (2010).
16. 3, Phys. Rev. Lett. 105, 176602 (2010).
17. 3 Due to the Three-Dimensional Bulk Fermi Surface, Phys. Rev. B 81, 195309 (2010).
18. 3, Phys. Rev. Lett. 106, 196801 (2011).
19. 3 Revealed in Diffusive Electron Transport, Phys. Rev. B 83, 241304 (2011).
20. 3 by Composition Tuning, Nat. Nanotechnol. 6, 705 (2011).
21. H. Steinberg, J.-B. Laloë, V. Fatemi, J. S. Moodera, and P. Jarillo-Herrero, Electrically Tunable Surface-to-Bulk Coherent Coupling in Topological Insulator Thin Films, Phys. Rev. B 84, 233101 (2011).
22. 3: Evidence for Layered Transport of Bulk Carriers, Phys. Rev. Lett. 108, 216803 (2012).
23. 3 Topological Insulator Nanoribbons, Nat. Commun. 3, 757 (2012).
24. F. Xiu, L. He, Y.Wang, L. Cheng, L.-T. Chang, M. Lang, G. Huang, X. Kou, Y. Zhou, X. Jiang, Z. Chen, J. Zou, A. Shailos, and K. L. Wang, Manipulating Surface States in Topological Insulator Nanoribbons, Nat. Nanotechnol. 6, 216 (2011).
25. A. A. Taskin, Z. Ren, S. Sasaki, K. Segawa, and Y. Ando, Observation of Dirac Holes and Electrons in a Topological Insulator, Phys. Rev. Lett. 107, 016801 (2011).
26. 3, Phys. Rev. Lett. 103, 246601 (2009).
27. 3, Science 329, 821 (2010).
28. 3 with Large Tunability in Chemical Potential, Adv. Funct. Mater. 21, 2351 (2011).
29. 3 Using the Shubnikovde Haas Effect, Phys. Rev. B 86, 045131 (2012).
30. B. A. Assaf, T. Cardinal, P. Wei, F. Katmis, J. S. Moodera, and D. Heiman, Linear Magnetoresistance in Topological Insulator Thin Films: Quantum Phase Coherence Effects at High Temperatures, Appl. Phys. Lett. 102, 012102 (2013).
31. 3, Phys. Status Solidi B 67, 665 (1975).
32. 3, Phys. Rev. Lett. 105, 076801 (2010).
33. 3, Phys. Rev. B 82, 081305 (2010).
34. 3, Phys. Rev. Lett. 108, 016401 (2012).
35. 2Se, Phys. Rev. B 86, 045314 (2012).
36. COMSOL, http://www.comsol.com.
37. y, Nat. Commun. 3, 636 (2012).
38. y Solid Solutions to Approach the Intrinsic Topological Insulator Regime, Phys. Rev. B 84, 165311 (2011).
39. 1.3, Sci. Rep. 3, 2656 (2013).
40. A. Roth, C. Brüne, H. Buhmann, L.W. Molenkamp, J. Maciejko, X.-L. Qi, and S.-C. Zhang, Nonlocal Transport in the Quantum Spin Hall state, Science 325, 294 (2009).
41. J. Balakrishnan, G. KokWai Koon, M. Jaiswal, A. H. Castro Neto, and B. Özyilmaz, Colossal Enhancement of Spin-Orbit Coupling in Weakly Hydrogenated Graphene, Nat. Phys. 9, 284 (2013).
42. G. Mihajlovic, J. E. Pearson, M. A. Garcia, S. D. Bader, and A. Hoffmann, Negative Nonlocal Resistance in Mesoscopic Gold Hall Bars: Absence of the Giant Spin Hall Effect, Phys. Rev. Lett. 103, 166601 (2009).
43. 3, Phys. Rev. Lett. 107, 096802 (2011).
44. 3 Topological Insulator, Phys. Rev. Lett. 107, 177602 (2011).
45. 1.3 Topological-Insulator Thin Crystals, Phys. Rev. B 86, 245321 (2012).
46. Y.-W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Measurement of Scattering Rate and Minimum Conductivity in Graphene, Phys. Rev. Lett. 99, 246803 (2007).
47. J. Wang, X. Chen, B.-F. Zhu, and S.-C. Zhang, Topological p-n Junction, Phys. Rev. B 85, 235131 (2012).
48. 1.2, Phys. Rev. B 87, 085442 (2013).
49. 2Se by Liquid Gating, Phys. Rev. B 88, 035128 (2013).
50. 2Se by Sn Doping, Phys. Rev. B 85, 155301 (2012).
51. 2Se, Phys. Rev. B 82, 241306 (2010).
52. 2Se with Large Bulk Resistivity (6 Ocm), Physica (Amsterdam) 44E, 917 (2012).
53. K. Segawa, Z. Ren, S. Sasaki, T. Tsuda, S. Kuwabata, and Y. Ando, Ambipolar Transport in Bulk Crystals of a Topological Insulator by Gating with Ionic Liquid, Phys. Rev. B 86, 075306 (2012).
54. There is no supporting report on nonzero off-diagonal components of the conductance tensor.
55. 3 Nanoribbons and Nanoplates, Nano Lett. 12, 1107 (2012).
56. 3 Thin Films, Phys. Rev. Lett. 109, 066803 (2012).
57. M. Lang, L. He, X. Kou, P. Upadhyaya, Y. Fan, H. Chu, Y. Jiang, J. H. Bardarson, W. Jiang, E. S. Choi, Y. Wang, N.-C. Yeh, J. Moore, and K. L. Wang, Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators, Nano Lett. 13, 48 (2013).
58. S. Hikami, A. I. Larkin, and Y. Nagaoka, Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System, Prog. Theor. Phys. 63, 707 (1980).
59. H. Beidenkopf, P. Roushan, J. Seo, L. Gorman, I. Drozdov, Y. S. Hor, R. J. Cava, and A. Yazdani, Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators, Nat. Phys. 7, 939 (2011).
60. J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, and A. Yacoby, Observation of Electron-Hole Puddles in Graphene Using a Scanning Single-Electron Transistor, Nat. Phys. 4, 144 (2008).
61. T. Ando, A. B. Fowler, and F. Stern, Electronic Properties of Two-Dimensional Systems, Rev. Mod. Phys. 54, 437 (1982).
62. A. B. Fowler, Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low Temperatures, Phys. Rev. Lett. 34, 15 (1975).
63. Y. A. Bychkov and E. I. Rashba, Properties of a 2d Electron Gas with Lifted Spectral Degeneracy, JETP Lett. 39, 78 (1984).
64. Y. A. Bychkov and E. I. Rashba, Oscillatory Effects and the Magnetic Susceptibility of Carriers in Inversion Layers, J. Phys. C 17, 6039 (1984).
65. J. H. Bardarson and J. E. Moore, Quantum Interference and Aharonov-Bohm Oscillations in Topological Insulators, Rep. Prog. Phys. 76, 056501 (2013).
66. I. Garate and L. Glazman, Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling, Phys. Rev. B 86, 035422 (2012).
67. 3 Achieved by Cd Doping, Phys. Rev. B 84, 075316 (2011).
68. 3, Adv. Mater. 24, 5581 (2012).
69. 3, J. Low Temp. Phys. 170, 397 (2013).
70. 3, New J. Phys. 12, 065013 (2010).
71. S. V. Eremeev, M. G. Vergniory, T. V. Menshchikova, A. A. Shaposhnikov, and E. V. Chulkov, The Effect of van der Waal's Gap Expansions on the Surface Electronic Structure of Layered Topological Insulators, New J. Phys. 14, 113030 (2012).
72. 2Se Thin Films: A First-Principles Study, J. Phys. Condens. Matter 24, 035502 (2012).