Quantized anomalous hall effect in magnetic topological insulators

Science

Volumn 329, Issue 5987, 2010, Pages 61-64

  Yu, Rui ^a   Zhang, Wei ^a   Zhang, Hai Jun ^a,b   Zhang, Shou Cheng ^b,c   Dai, Xi ^a   Fang, Zhong ^a  

^a INSTITUTE OF PHYSICS   (China)

^b STANFORD UNIVERSITY   (United States)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY DERIVATIVE; BISMUTH DERIVATIVE; CHROMIUM; IRON; SELENIUM DERIVATIVE; TELLURIUM DERIVATIVE;

HEAVY METAL; INSULATION; MAGNETIC FIELD; QUANTUM MECHANICS; TOPOLOGY; TRANSPORT PROCESS; TWO-DIMENSIONAL MODELING;

ACCELERATION; ANOMALOUS HALL EFFECT; ARTICLE; CALCULATION; CHEMICAL STRUCTURE; CONDUCTANCE; ELECTRIC POTENTIAL; FILM; MAGNETIC FIELD; MAGNETISM; PREDICTION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 77954336057     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1187485     Document Type: Article

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30. We acknowledge valuable discussions with C. X. Liu, X. L. Qi, Q. Niu, and S. Q. Shen and support from the National Science Foundation of China, the 973 Program of China (nos. 2007CB925000 and 2010CB923000), and the International Science and Technology Cooperation Program of China. S.C.Z. is supported by the U.S. NSF under grant number DMR-0904264.