Robust surface state of intrinsic topological insulator Bi 2Te 2Se thin films: A first-principles study

Journal of Physics Condensed Matter

Volumn 24, Issue 3, 2012, Pages

  Dai, Xian Qi ^a,b   Zhao, Bao ^a   Zhao, Jian Hua ^a   Li, Yan Hui ^a   Tang, Ya Nan ^a   Li, Ning ^c  

^a HENAN NORMAL UNIVERSITY   (China)

^b ZHENGZHOU NORMAL UNIVERSITY   (China)

^c HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM SURFACES; FIRST-PRINCIPLES STUDY; POTENTIAL APPLICATIONS; SPIN-ORBIT COUPLINGS; SURFACE STATE;

BISMUTH COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; THIN FILMS; TOPOLOGY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84255193198     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/3/035502     Document Type: Article

References (42)

1. Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
2. Qi X L and Zhang S C 2010 Phys. Today 63 33
3. Moore J E 2010 Nature 464 194
4. Hsieh D, Xia Y, Qian D, Wray L, Dil J, Meier F, Osterwalder J, Patthey L, Checkelsky J and Ong N 2009 Nature 460 1101
5. Yazyev O V, Moore J E and Louie S G 2010 Phys. Rev. Lett. 105 266806
6. Fu L and Kane C L 2008 Phys. Rev. Lett. 100 096407
7. Fu L and Kane C L 2007 Phys. Rev. B 76 045302
8. Hsieh D, Qian D, Wray L, Xia Y, Hor Y, Cava R and Hasan M 2008 Nature 452 970
9. Zhang H J, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nature Phys. 5 438
10. Xia Y et al 2009 Nature Phys. 5 398
11. Chen Y L, Analytis J G, Chu J, Liu Z K, Mo S, Qi X L, Zhang H J, Lu D H, Dai X and Fang Z 2009 Science 325 178
12. Hsieh D et al 2009 Phys. Rev. Lett. 103 146401
13. Chen Y L et al 2010 Science 329 659
14. Zhang Y, Chang C Z, He K, Wang L L, Chen X, Jia J F, Ma X C and Xue Q K 2010 Appl. Phys. Lett. 97 194102
15. Wang Z, Lin T, Wei P, Liu X, Dumas R, Liu K and Shi J 2010 Appl. Phys. Lett. 97 042112
16. Checkelsky J G, Hor Y S, Cava R J and Ong N P 2011 Phys. Rev. Lett. 106 196801
17. Xiu F et al 2011 Nature Nanotechnol. 6 216
18. He K, Zhang Y, Chang C, Song C, Wang L, Chen X, Jia J, Fang Z, Dai X and Shan W 2010 Nature Phys. 6 584
19. Li Y Y et al 2010 Adv. Mater. 22 4002
20. Zhang G, Qin H, Teng J, Guo J, Guo Q, Dai X, Fang Z and Wu K 2009 Appl. Phys. Lett. 95 053114
21. Li H D, Wang Z Y, Kan X, Guo X, He H T, Wang Z, Wang J N, Wong T L, Wang N and Xie M H 2010 New J. Phys. 12 103038
22. Kong D, Dang W, Cha J J, Li H, Meister S, Peng H, Liu Z and Cui Y 2010 Nano Lett. 10 2245
23. Kong D, Randel J, Peng H, Cha J, Meister S, Lai K, Chen Y, Shen Z, Manoharan H and Cui Y 2010 Nano Lett. 10 329
24. Goyal V, Teweldebrhan D and Balandin A 2010 Appl. Phys. Lett. 97 133117
25. Maciejko J, Qi X L, Drew H D and Zhang S C 2010 Phys. Rev. Lett. 105 166803
26. Ghaemi P, Mong R and Moore J E 2010 Phys. Rev. Lett. 105 166603
27. Yu R, Zhang W, Zhang H J, Zhang S C, Dai X and Fang Z 2010 Science 329 61
28. Klintenberg M 2010 arXiv:1007.4838v1
29. Wang L and Johnson D 2011 Phys. Rev. B 83 241309
30. Xu S, Wray L, Xia Y, Shankar R, Petersen A, Fedorov A, Lin H, Bansil A, Hor Y and Grauer D 2010 arXiv:1007.5111v1
31. Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2010 Phys. Rev. B 82 241306
32. Park K, Heremans J J, Scarola V W and Minic D 2010 Phys. Rev. Lett. 105 186801
33. Nakajima S 1963 J. Phys. Chem. Solids 24 479
34. Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
35. Blchl P E 1994 Phys. Rev. B 50 17953
36. Kresse G and Furthmller J 1996 Phys. Rev. B 54 11169
37. Hobbs D, Kresse G and Hafner J 2000 Phys. Rev. B 62 11556
38. Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
39. Hybertsen M S and Louie S G 1986 Phys. Rev. B 34 5390
40. Chen H, Zhu W, Xiao D and Zhang Z 2011 arXiv:1104.1467v1
41. Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
42. Shan W Y, Lu H Z and Shen S Q 2010 New J. Phys. 12 043048