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Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 15, 2012, Pages

Fermi level tuning and a large activation gap achieved in the topological insulator Bi 2Te 2Se by Sn doping

(5) Ren, Zhi a Taskin, A A a Sasaki, Satoshi a Segawa, Kouji a Ando, Yoichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84860273565 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.85.155301 Document Type: Article

Times cited : (127)

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