Quantized hall effect and shubnikov-de haas oscillations in highly doped Bi 2Se 3: Evidence for layered transport of bulk carriers

Physical Review Letters

Volumn 108, Issue 21, 2012, Pages

  Cao, Helin ^a   Tian, Jifa ^a   Miotkowski, Ireneusz ^a   Shen, Tian ^a,b   Hu, Jiuning ^a   Qiao, Shan ^c   Chen, Yong P ^a  

^a PURDUE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

2D ELECTRON SYSTEM; BULK CARRIER; ELECTRONIC TRANSPORT; LANDAU LEVELS; MAGNETIC FIELD CONTROLS; MAGNETOTRANSPORT FEATURES; MULTI-LAYERED; QUANTIZED HALL RESISTANCE; SAMPLE SURFACE; SAMPLE THICKNESS; SHUBNIKOV-DE HAAS OSCILLATIONS; STEP SIZE; THERMOELECTRIC MATERIAL; TILTED MAGNETIC FIELDS; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; QUANTUM HALL EFFECT;

MAGNETIC FIELDS;

EID: 84861589640     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.108.216803     Document Type: Article

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