Emergent quantum confinement at topological insulator surfaces

Nature Communications

Volumn 3, Issue , 2012, Pages

  Bahramy, M S ^a   King, P D C ^b   De La Torre, A ^b   Chang, J ^c   Shi, M ^c   Patthey, L ^c   Balakrishnan, G ^d   Hofmann, Ph ^e   Arita, R ^a,f   Nagaosa, N ^a,f   Baumberger, F ^b  

^a RIKEN   (Japan)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d UNIVERSITY OF WARWICK   (United Kingdom)

^e AARHUS UNIVERSITY   (Denmark)

^f UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH CHALCHOGENIDE DERIVATIVE; METAL DERIVATIVE; UNCLASSIFIED DRUG;

BISMUTH; ELECTRONIC EQUIPMENT; INSULATION; QUANTUM MECHANICS; THREE-DIMENSIONAL MODELING; TOPOLOGY;

ARTICLE; CHEMICAL BINDING; CHEMICAL STRUCTURE; CIRCULAR DICHROISM; ELECTRONICS; QUANTITATIVE ANALYSIS; SEMICONDUCTOR;

EID: 84869457323     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2162     Document Type: Article

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