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Advanced Materials

Volumn 24, Issue 41, 2012, Pages 5581-5585

Achieving surface quantum oscillations in topological insulator thin films of Bi2Se3

(4) Taskin, A A a Sasaki, Satoshi a Segawa, Kouji a Ando, Yoichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

bismuth selenide; molecular beam epitaxy; surface quantum oscillations; topological insulators; weak antilocalization

Indexed keywords

BISMUTH SELENIDE; DEPOSITION TEMPERATURES; HIGH MOBILITY; HIGH QUALITY; PHASE-COHERENCE LENGTH; QUANTUM OSCILLATIONS; SAPPHIRE SUBSTRATES; SURFACE ELECTRON; TOPOLOGICAL INSULATORS; TWO-STEP DEPOSITION; WEAK ANTILOCALIZATION;

BISMUTH; ELECTRIC INSULATORS; MOLECULAR BEAM EPITAXY; SAPPHIRE; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SELENIUM COMPOUNDS;

ALUMINUM OXIDE; BISMUTH; SELENIUM DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; QUANTUM THEORY; SURFACE PROPERTY; TEMPERATURE;

ALUMINUM OXIDE; BISMUTH; MICROSCOPY, ATOMIC FORCE; QUANTUM THEORY; SELENIUM COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE;

EID: 84868149428 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201201827 Document Type: Article

Times cited : (90)

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