Carrier transport and recombination in a-Si:H p-i-n solar cells in dark and under illumination

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 303-308

  Deng, J ^a   Pearce, J M ^a   Vlahos, V ^a   Koval, R J ^b   Collins, R W ^a   Wronski, C R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; PHOTOCURRENTS; PROBABILITY; SHORT CIRCUIT CURRENTS;

CARRIER TRANSPORT; OPEN CIRCUIT VOLTAGE CHARACTERISTICS;

SOLAR CELLS;

EID: 1642500423     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a3.4     Document Type: Conference Paper

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