Correlation of light-induced changes in a-Si:H films with characteristics of corresponding solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1098-1101

  Pearce, J M ^a   Koval, R J ^a   Collins, R W ^a   Wronski, C R ^a   Al Jassim, M M ^b   Jones, K M ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; ELECTRONS; FERMI LEVEL; SEMICONDUCTING SILICON;

CARRIER RECOMBINATION; DANGLING BOND DEFECTS; QUASI-FERMI LEVEL SPLITTING;

SILICON SOLAR CELLS;

EID: 0036953774     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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