A facile solution-doping method to improve a low-temperature zinc oxide precursor: Towards low-cost electronics on plastic foil

Advanced Functional Materials

Volumn 24, Issue 17, 2014, Pages 2537-2543

  Weber, Dennis ^a,c   Botnaraş, Silviu ^b,c   Pham, Duy Vu ^c   Merkulov, Alexey ^c   Steiger, Jürgen ^c   Schmechel, Roland ^b   De Cola, Luisa ^d  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c EVONIK INDUSTRIES AG   (Germany)

^d UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

flexible electronics; morphology of thin films; preferred orientation; solution processed zinc oxide; thin film transistors

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; INDIUM; METAL IONS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; X RAY DIFFRACTION; ZINC OXIDE;

DOUBLE LAYER SYSTEMS; FIELD-EFFECT MOBILITIES; LOW-COST ELECTRONICS; PREFERRED ORIENTATIONS; PROCESS TEMPERATURE; SOLUTION-PROCESSED; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE PRECURSORS;

SEMICONDUCTOR DOPING;

EID: 84899903502     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201303461     Document Type: Article

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