Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor

Journal of Materials Research

Volumn 25, Issue 4, 2010, Pages 695-700

  Hwang, Young Hwan ^a   Seo, Seok Jun ^a   Bae, Byeong Soo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHANNEL LAYERS; CHANNEL MOBILITY; DENSE SURFACE; DEPLETION MODES; ELECTRICAL PROPERTY; ELECTRON CONDUCTION; LOW-COST SOLUTION; MICRO-STRUCTURAL; N-TYPE SEMICONDUCTORS; OFF CURRENT; PRECURSOR SOLUTION CONCENTRATION; PREFERENTIAL ORIENTATION; SUBTHRESHOLD SLOPE; VISIBLE LIGHT; ZNO; ZNO FILMS;

ELECTRIC PROPERTIES; FABRICATION; FIELD EFFECT TRANSISTORS; POLYMER BLENDS; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77957962498     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2010.0103     Document Type: Article

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