Electrical response of amorphous silicon thin-film transistors under mechanical strain

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6224-6229

  Gleskova, H ^a   Wagner, S ^a   Soboyejo, W ^a   Suo, Z ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON THIN-FILM TRANSISTOR; ELECTRICAL RESPONSE; MECHANICAL STRAIN; MOBILITY CHANGES; SOURCE-DRAIN CURRENT; UNIAXIAL COMPRESSIVE;

AMORPHOUS SILICON; POLYIMIDES; THIN FILM TRANSISTORS;

TENSILE STRAIN;

EID: 0037113019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513187     Document Type: Article

References (21)

1. S. D. Theiss and S. Wagner, IEEE Electron Device Lett. 17, 264 (1996). edl EDLEDZ 0741-3106
2. M. Wu, K. Pangal, J. C. Sturm, S. Wagner, Appl. Phys. Lett. 75, 2244 (1999). apl APPLAB 0003-6951
3. H. Gleskova, S. Wagner, Z. Suo, Appl. Phys. Lett. 75, 3011 (1999). apl APPLAB 0003-6951
4. G. N. Parsons, C. S. Yang, C. B. Arthur, T. M. Klein, L. Smith, Mater. Res. Soc. Symp. Proc. 508, 19 (1998). mrs MRSPDH 0272-9172
5. H. Gleskova, S. Wagner, Z. Suo, Mater. Res. Soc. Symp. Proc. 508, 73 (1998). mrs MRSPDH 0272-9172
6. J. N. Sandoe, in 1998 SID International Symposium, Digest of Technical Papers, Vol. 29, edited by J. Morreale, (Society for Information Display, Santa Ana, CA, 1998), pp. 293-296.
7. E. Lueder, M. Muecke, S. Polach, in Proceedings of the 18th International Display Research Conference, Asia Display '98, edited by Jin Jang, (Society for Information Display, Santa Ana, CA, 1998), pp. 173-177.
8. A. Constant, S. G. Burns, H. Shanks, C. Gruber, A. Landin, D. Schmidt, C. Thielen, F. Olympie, T. Schumacher, J. Cobbs, Electrochem. Soc. Proc. 94-35, 392 (1995). pes PESODO 0161-6374
9. D. B. Thomasson, M. Bonse, J. R. Huang, C. R. Wronski, T. N. Jackson, in International Electron Devices Meeting-1998 (IEEE Technical Digest, Piscataway, NJ, 1998), pp. 253-256.
10. S. D. Theiss, P. G. Carey, P. M. Smith, P. Wickboldt, T. W. Sigmon, Y. J. Tung, T.-J. King, in International Electron Devices Meeting-1998 (IEEE Technical Digest, Piscataway, NJ, 1998), pp. 257-260.
11. J. A. Kreuz, S. N. Milligan, R. F. Sutton, DuPont Films Technical Paper 3/94, Reorder No. H-54504.
12. H. Gleskova, S. Wagner, V. Gašparík, P. Kováč, J. Electrochem. Soc. 148, G370 (2001). jes JESOAN 0013-4651
13. S. M. Gates, Mater. Res. Soc. Symp. Proc. 467, 843 (1997). mrs MRSPDH 0272-9172
14. F. Jansen and M. A. Machonkin, J. Vac. Sci. Technol. A 6, 1696 (1988). jva JVTAD6 0734-2101
15. W. E. Spear and M. Heintze, Philos. Mag. B 54, 343 (1986). pmb PMABDJ 0141-8637
16. R. E. Belford, J. Electron. Mater. 30, 807 (2001). jem JECMA5 0361-5235
17. S. Sherman, S. Wagner, R. A. Gottscho, Appl. Phys. Lett. 69, 3242 (1996). apl APPLAB 0003-6951
18. S. Sherman, P. Y. Lu, R. A. Gottscho, S. Wagner, Mater. Res. Soc. Symp. Proc. 377, 749 (1995). mrs MRSPDH 0272-9172
19. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein, Phys. Rev. Lett. 47, 1480 (1981). prl PRLTAO 0031-9007
20. B. Welber and M. H. Brodsky, Phys. Rev. B 16, 3660 (1977). prq PLRBAQ 0556-2805
21. H. Gleskova and S. Wagner, Appl. Phys. Lett. 79, 3347 (2001). apl APPLAB 0003-6951