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Volumn 104, Issue 5, 2014, Pages

High-performance ferroelectric memory based on fully patterned tunnel junctions

(12) Boyn, S a,e Girod, S a,e Garcia, V a,e Fusil, S a,e Xavier, S b Deranlot, C a,e Yamada, H a,c,d,e Carretero C a,e Jacquet, E a,e Bibes, M a,e Barthelemy A a,e Grollier, J a,e

a CNRS (France)

b THALES RESEARCH AND TECHNOLOGY (France)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

e UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN WALLS; FERROELECTRIC DEVICES; FERROELECTRICITY; POLARIZATION; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

ELECTROSTATIC POTENTIALS; FERROELECTRIC BARRIERS; FERROELECTRIC MEMORY; FERROELECTRIC TUNNEL JUNCTIONS; INTERMEDIATE RESISTANCE; NON-VOLATILE MEMORY APPLICATION; POLARIZATION DIRECTION; THREE ORDERS OF MAGNITUDE;

FERROELECTRIC MATERIALS;

EID: 84899819528 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4864100 Document Type: Article

Times cited : (108)

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