Field effect transistors for terahertz detection - silicon versus III-V material issue

Opto-Electronics Review

Volumn 18, Issue 3, 2010, Pages 225-230

  Knap, W ^a   Videlier, H ^a   Nadar, S ^a   Coquillat, D ^a   Dyakonova, N ^a   Teppe, F ^a   Bialek, M ^b   Grynberg, M ^b   Karpierz, K ^b   Lusakowski, J ^b   Nogajewski, K ^b   Seliuta, D ^c   Kasalynas I ^c   Valusis G ^c  

^a CNRS   (France)

^b UNIVERSITY OF WARSAW   (Poland)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

field effect transistors; imaging; THz detection

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; IMAGING TECHNIQUES; NATURAL FREQUENCIES; PLASMA OSCILLATIONS; SILICON; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

CRYOGENIC TEMPERATURES; GATE TRANSISTORS; NANOMETER TRANSISTORS; NONLINEAR PROPERTIES; RESONANT EXCITATION; TERAHERTZ DETECTION; THZ DETECTION; TWO-DIMENSIONAL PLASMA;

TERAHERTZ WAVES;

EID: 85027921444     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-010-1018-7     Document Type: Article

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