Improving the electrical and optical properties of DC-sputtered ZnO:Al by thermal post deposition treatments

Thin Solid Films

Volumn 520, Issue 12, 2012, Pages 4203-4207

  Wimmer, Mark ^a   Ruske, Florian ^a   Scherf, Simone ^a   Rech, Bernd ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Aluminum doped zinc oxide; Post deposition treatments; Transparent conducting oxides

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AS-DEPOSITED FILMS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL TRANSPORT PROPERTIES; HIGH TEMPERATURE TREATMENTS; POST DEPOSITION TREATMENT; PROTECTIVE LAYERS; TRANSPARENT CONDUCTING OXIDE; ZNO; ZNO:AL FILMS;

ALUMINUM; ALUMINUM COATINGS; CARRIER CONCENTRATION; OPTICAL PROPERTIES; TRANSPORT PROPERTIES; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84858700001     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.102     Document Type: Conference Paper

References (21)

1. A.V. Shah, H. Schade, M. Vanecek, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and J. Bailat Prog. Photovolt Res. Appl. 12 2004 113
2. J. Müller, B. Rech, J. Springer, and M. Vanecek Solar Energy 77 2004 917
3. S. Fäy, L. Feitknecht, R. Schlüchter, U. Kroll, E. Vallat-Sauvain, and A. Shah Sol. Energy Mater. Sol. Cells 90 2006 2960
4. O. Kluth, B. Rech, L. Houben, S. Wieder, G. Schöpe, C. Beneking, H. Wagner, A. Löffl, and H.W. Schock Thin Solid Films 351 1999 247
5. M. Berginski, J. Hüpkes, W. Reetz, B. Rech, and M. Wuttig Thin Solid Films 516 2008 5836
6. V. Sittinger, F. Ruske, W. Werner, B. Szyszka, B. Rech, J. Hüpkes, G. Schöpe, and H. Stiebig Thin Solid Films 496 2006 16
7. T.J. Coutts, D.L. Young, and X. Li MRS Bull. 25 2000 58
8. C. Agashe, O. Kluth, J. Hüpkes, U. Zastrow, B. Rech, and M. Wuttig J. Appl. Phys. 95 4 2004 1911
9. M. Berginski, J. Hüpkes, M. Schulte, G. Schöpe, H. Stiebig, B. Rech, and M. Wuttig J. Appl. Phys. 101 2007 074903
10. The capping of the film with phosphorous doped a-Si:H is in principle compatible with our solar cell concept described in detail in C. Becker, F. Ruske, T. Sontheimer, B. Gorka, U. Bloeck, S. Gall, and B. Rech J. Appl. Phys. 106 2009 084506
11. For annealing temperatures exceeding the transformation point of the glass, a diffusion barrier on top of the glass is essential. A slight deformation of the glass could not be observed by eye, but cannot be excluded. As an example for an annealing procedure used for the production of thin film silicon solar cells, which exceeds the transformation point of the glass substrate strongly, see for instance B. Rau, T. Weber, B. Gorka, P. Dogan, F. Fenske, K.Y. Lee, S. Gall, and B. Rech Mater. Sci. Eng. B 2009 329
12. L.J. van der Pauw Philips Res. Reports 13 1958 1
13. B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, M. Heuken, and B. Monemar Phys. Rev. B 67 2003 045314
14. 6 60 sccm, pressure 30 mTorr, Induced Coupled Plasma (ICP) Power 300 W (13.56 MHz).
15. F. Ruske, M. Roczen, K. Lee, M. Wimmer, S. Gall, J. Hüpkes, D. Hrunski, and B. Rech J. Appl. Phys. 107 2010 013708
16. K. Ellmer, and R. Mientus Thin Solid Films 516 2008 4620
17. K. Ellmer, and R. Mientus Thin Solid Films 516 2008 5829
18. K. Ellmer J. Phys. D: Appl. Phys. 34 2001 3097
19. J. Seto J. Appl. Phys. 46 12 1975 5247
20. T. Pisarkiewicz, K. Zakrzewska, and E. Leja Thin Solid Films 174 1989 217
21. A. Pflug, V. Sittinger, F. Ruske, B. Szyszka, and G. Dittmar Thin Solid Films 455-456 2004 201