A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 57, Issue , 2014, Pages 232-233

  Song, Taejoong ^a   Rim, Woojin ^a   Jung, Jonghoon ^a   Yang, Giyong ^a   Park, Jaeho ^a   Park, Sunghyun ^a   Baek, Kang Hyun ^a   Baek, Sanghoon ^a   Oh, Sang Kyu ^a   Jung, Jinsuk ^a   Kim, Sungbong ^a   Kim, Gyuhong ^a   Kim, Jintae ^a   Lee, Youngkeun ^a   Kim, Kee Sup ^a   Sim, Sang Pil ^a   Yoon, Jong Shik ^a   Choi, Kyu Myung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; PROGRAM PROCESSORS;

EXPLOSIVE GROWTH; FAILURE PROBABILITY; LOW POWER APPLICATION; MOBILE APPLICATIONS; SUBTHRESHOLD SLOPE; SYSTEM-ON-A-CHIP; TRANSISTOR SIZING; VOLTAGE-SCALING;

INTEGRATED CIRCUITS;

EID: 84898064925     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2014.6757413     Document Type: Conference Paper

References (11)

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