Surface self-diffusion of silicon during high temperature annealing

Journal of Applied Physics

Volumn 115, Issue 13, 2014, Pages

  Acosta Alba, Pablo E ^a,b   Kononchuk, Oleg ^b   Gourdel, Christophe ^b   Claverie, Alain ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; RAPID THERMAL ANNEALING; SILICON; STOCHASTIC SYSTEMS; SURFACE TOPOGRAPHY;

ATOMIC-SCALE MECHANISMS; DIFFUSION EQUATIONS; HIGH-TEMPERATURE ANNEALING; PARAMETRIC MODELING; ROUGHENING TRANSITION; ROUGHNESS EVOLUTION; THERMAL FLUCTUATIONS; THERMALLY ACTIVATED;

STOCHASTIC MODELS;

EID: 84898039727     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4870476     Document Type: Article

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