Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber

Journal of Applied Physics

Volumn 83, Issue 7, 1998, Pages 3614-3619

  Mohadjeri, B ^a   Baklanov, M R ^a,b   Kondoh, E ^a   Maex, K ^a  

^a IMEC   (Belgium)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000195255     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366629     Document Type: Article

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