Formation speed of atomically flat surface on Si (1 0 0) in ultra-pure argon

Microelectronic Engineering

Volumn 88, Issue 10, 2011, Pages 3133-3139

  Li, Xiang ^a   Teramoto, Akinobu ^a   Suwa, Tomoyuki ^a   Kuroda, Rihito ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Atomically flat; Low temperature; MOS; Silicon; Surface

Indexed keywords

ANNEALING TEMPERATURES; ATOMICALLY FLAT; ATOMICALLY FLAT SURFACE; FLATTENING TECHNOLOGY; LARGE-DIAMETER; LOW TEMPERATURES; MOS; OFF-ANGLE; PROCESS SPEED; PROCESS TIME; SI ATOMS; SI SURFACES; SI(1 0 0); WAFER SURFACE;

ARGON; MANUFACTURE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPEED; SURFACES;

SILICON WAFERS;

EID: 80052819000     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.06.014     Document Type: Article

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