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Volumn 140, Issue 13, 2014, Pages

Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

(3) Park, Sohee a Park, Changwon b Kim, Gunn c

a Seoul National University (South Korea)

b OAK RIDGE NATIONAL LABORATORY (United States)

c Sejong University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON NITRIDE; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DEFECTS; DOPING (ADDITIVES); ELECTRON SCATTERING; ELECTRONIC PROPERTIES; III-V SEMICONDUCTORS; NITRIDES;

ELECTRONIC TRANSPORT; FIRST-PRINCIPLES CALCULATION; HEXAGONAL BORON NITRIDE (H-BN); INTERFACIAL COUPLINGS; INTERLAYER COUPLING; INTRINSIC VACANCIES; NONMAGNETIC DOPANTS; STRUCTURAL AND ELECTRONIC PROPERTIES;

GRAPHENE;

EID: 84897972138 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.4870097 Document Type: Article

Times cited : (63)

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