Effective control of the charge and magnetic states of transition-metal atoms on single-layer boron nitride

Physical Review Letters

Volumn 108, Issue 20, 2012, Pages

  Huang, Bing ^a   Xiang, Hongjun ^b   Yu, Jaejun ^c   Wei, Su Huai ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b FUDAN UNIVERSITY   (China)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CRYSTAL-FIELD SPLITTING; D ORBITALS; DEFECT ENGINEERING; LAYERED SEMICONDUCTORS; MAGNETIC NANOSTRUCTURES; MAGNETIC STATE; NONVOLATILE MEMORY DEVICES; QUANTUM INFORMATION DEVICE; RELATIVE POSITIONS; SINGLE LAYER; SPIN CROSSOVERS; TRANSITION METAL ATOMS;

DEFECTS; ELECTRIC FIELDS; MAGNETIC PROPERTIES; NITRIDES; NONVOLATILE STORAGE; TRANSITION METALS;

QUANTUM OPTICS;

EID: 84861635548     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.108.206802     Document Type: Article

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