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Volumn 115, Issue 8, 2014, Pages

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors

(3) Chang, Jiwon a Register, Leonard F a Banerjee, Sanjay K a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; DENSITY FUNCTIONAL THEORY; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; HAMILTONIANS; MONOLAYERS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SELENIUM; SEMICONDUCTING TELLURIUM; TELLURIUM COMPOUNDS; TRANSISTORS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

BALLISTIC PERFORMANCE; DRAIN-INDUCED BARRIER LOWERING; GATE INDUCED DRAIN LEAKAGES; NEGATIVE DIFFERENTIAL RESISTANCES; NON-EQUILIBRIUM GREEN'S FUNCTION; OUTPUT CHARACTERISTICS; TIGHT-BINDING HAMILTONIANS; TRANSITION METAL DICHALCOGENIDES;

MOSFET DEVICES;

EID: 84896789926 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4866872 Document Type: Article

Times cited : (94)

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