Atomistic full-band simulations of monolayer MoS2 transistors

Applied Physics Letters

Volumn 103, Issue 22, 2013, Pages

  Chang, Jiwon ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN-INDUCED BARRIER LOWERING; GATE-INDUCED DRAIN LEAKAGE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEGATIVE DIFFERENTIAL RESISTANCES; OUTPUT CHARACTERISTICS; QUANTUM TRANSPORT SIMULATIONS; SUBTHRESHOLD SLOPE; TIGHT-BINDING HAMILTONIANS;

BALLISTICS; HAMILTONIANS; MONOLAYERS; MOSFET DEVICES; QUANTUM ELECTRONICS; TRANSPORT PROPERTIES;

MOLYBDENUM COMPOUNDS;

EID: 84888618939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4837455     Document Type: Article

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