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Applied Physics Letters

Volumn 104, Issue 10, 2014, Pages

Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

(8) Jin, Bo a Lim, Taekyung b Ju, Sanghyun b Latypov, Marat I a Pi, Dong Hai a Seop Kim, Hyoung a Meyyappan, M c Lee, Jeong Soo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Kyonggi University (South Korea)

c NASA AMES RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; RANDOM ACCESS STORAGE;

ANNEALING TEMPERATURES; GA-DOPED; INDIUM OXIDE; LOW POWER; NANOWIRE DEVICES; PHASE CHANGE RANDOM ACCESS MEMORY; RESISTANCE STABILITY;

GALLIUM;

EID: 84896279043 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4868537 Document Type: Article

Times cited : (4)

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