Formation of Ge2 Sb2 Te5 - TiOx nanostructures for phase change random access memory applications

Electrochemical and Solid-State Letters

Volumn 13, Issue 2, 2010, Pages

  Lee, Dongbok ^a   Yim, Sung Soo ^a   Lyeo, Ho Ki ^b   Kwon, Min Ho ^a   Kang, Dongmin ^a   Jun, Hyun Goo ^a   Nam, Sung Wook ^a   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COSPUTTERING; MELT-QUENCHING; PHASE CHANGE RANDOM ACCESS MEMORY; RESET CURRENTS; ROOM TEMPERATURE; TEMPERATURE-DEPENDENT RESISTANCE; THIN LAYERS; TIO;

ACTIVATION ENERGY; GERMANIUM; PHASE SEPARATION; RANDOM ACCESS STORAGE; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 74249101284     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3264734     Document Type: Article

References (24)

1. S. Lai, in Proceedings of the IEEE International Electron Devices Meeting, p. 255 (2003).
2. Y. N. Hwang, J. S. Hong, S. H. Lee, S. J. Ahn, G. T. Jeong, G. H. Koh, J. H. Oh, H. J. Kim, W. C. Jeong, S. Y. Lee, Dig. Tech. Pap.-Symp. VLSI Technol., 2003, 173.
3. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, in Proceedings of the IEEE International Electron Devices Meeting, p. 699 (2003).
4. J. H. Oh, J. H. Park, Y. S. Lim, H. S. Lim, Y. T. Oh, J. S. Kim, J. M. Shin, J. H. Park, Y. J. Song, K. C. Ryoo, in Proceedings of the IEEE International Electron Devices Meeting, p. 1 (2006).
5. T. -Y. Lee, S. -S. Yim, D. Lee, M. -H. Lee, D. -H. Ahn, and K. -B. Kim, Appl. Phys. Lett. 0003-6951, 89, 163503 (2006). 10.1063/1.2362981 (Pubitemid 44601743)
6. T. -Y. Lee, K. H. P. Kim, D. -S. Suh, C. Kim, Y. -S. Kang, D. G. Cahill, D. Lee, M. -H. Lee, M. -H. Kwon, K. -B. Kim, Appl. Phys. Lett. 0003-6951, 94, 243103 (2009). 10.1063/1.3155202
7. D. Ha and K. Kim, in Proceedings of the Symposium on VLSI Technology, Systems and Application, IEEE, p. 1 (2007).
8. Outokumpu HSC Chemistry for Windows, Outokumpu Research, Finland (1999).
9. O. Banakh, P. E. Schmid, R. Sanjines, and F. Levy, Surf. Coat. Technol. 0257-8972, 151-152, 272 (2002). 10.1016/S0257-8972(01)01605-X (Pubitemid 34231640)
10. L. van der Pauw, Philips Res. Rep. 0031-7918, 13, 1 (1958).
11. M. Atzmon, D. A. Kessler, and D. J. Srolovitz, J. Appl. Phys. 0021-8979, 72, 442 (1992). 10.1063/1.351872
12. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, and M. Wuttig, J. Appl. Phys. 0021-8979, 87, 4130 (2000). 10.1063/1.373041
13. H. E. Kissinger, Anal. Chem. 0003-2700, 29, 1702 (1957). 10.1021/ac60131a045
14. S. -H. Lee, Y. Jung, and R. Agarwal, Nano Lett. 1530-6984, 8, 3303 (2008). 10.1021/nl801698h
15. S. Raoux, H. -Y. Cheng, J. L. Jordan-Sweet, B. Munoz, and M. Hitzbleck, Appl. Phys. Lett. 0003-6951, 94, 183114 (2009). 10.1063/1.3133344
16. J. Tominaga, T. Nakano, and N. Atoda, Jpn. J. Appl. Phys., Part 1 0021-4922, 37, 1852 (1998). 10.1143/JJAP.37.1852
17. A. Ebina, M. Hirasaka, J. Isemoto, A. Takase, G. Fujinawa, and I. Sugiyama, Jpn. J. Appl. Phys., Part 1 0021-4922, 40, 1569 (2001). 10.1143/JJAP.40.1569
18. N. Ohshima, J. Appl. Phys. 0021-8979, 79, 8357 (1996). 10.1063/1.362548
19. N. Ohshima, J. Appl. Phys. 0021-8979, 83, 5244 (1998). 10.1063/1.367346
20. H. Horii, J. H. Yi, J. H. Park, Y. H. Ha, I. G. Baek, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, and K. H. Lee, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562, 2003, 177.
21. D. S. McLachlan, J. Electroceram. 1385-3449, 5, 93 (2000). 10.1023/A:1009954017351 (Pubitemid 32067972)
22. H. -K. Lyeo, D. G. Cahill, B. -S. Lee, J. R. Abelson, M. -H. Kwon, K. -B. Kim, S. G. Bishop, and B. -K. Cheong, Appl. Phys. Lett. 0003-6951, 89, 151904 (2006). 10.1063/1.2359354 (Pubitemid 44570529)
23. N. Taketoshi, T. Yagi, and T. Baba, Jpn. J. Appl. Phys. 0021-4922, 48, 05EC01 (2009). 10.1143/JJAP.48.05EC01
24. H. -K. Lyeo and D. G. Cahill, Phys. Rev. B 0163-1829, 73, 144301 (2006). 10.1103/PhysRevB.73.144301