Phase-change memory devices based on gallium-doped indium oxide

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Wang, S L ^a,b   Chen, C Y ^a   Hsieh, M K ^c   Lee, W C ^c   Kung, A H ^b,d   Peng, L H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM; INDIUM; PHASE TRANSITIONS; PULSE CODE MODULATION;

BIXBYITE; CRYSTALLINE PHASE TRANSITIONS; CRYSTALLIZATION TEMPERATURES; DEVICE RESISTANCES; GALLIUM-DOPED INDIUM OXIDES; JOULE HEATING EFFECTS; LOW-RESISTANCE STATE; NANOSECOND ELECTRIC PULSE; ORDERS OF MAGNITUDES; PHASE CHANGES; PHASE-CHANGE MEMORIES;

PHASE CHANGE MEMORY;

EID: 63049113072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089238     Document Type: Article

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