Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire (1120)

Physica Status Solidi - Rapid Research Letters

Volumn 8, Issue 3, 2014, Pages 256-259

  Ueno, Kohei ^a   Kishikawa, Eiji ^b   Inoue, Shigeru ^b   Ohta, Jitsuo ^b   Fujioka, Hiroshi ^b   Oshima, Masaharu ^a   Fukuyama, Hiroyuki ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

AlN; Sapphire; Sputtering; Structure; Thin films

Indexed keywords

EPILAYERS; SPUTTERING; STRUCTURE (COMPOSITION); THIN FILMS; TWO DIMENSIONAL;

ALN; GROWTH CONDITIONS; HIGH QUALITY; LOW COST FABRICATION; PRECISE CONTROL; PULSED SPUTTERING; STAGE OF GROWTH; X RAY ROCKING CURVE;

SAPPHIRE;

EID: 84896055735     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308275     Document Type: Article

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