Microstructure of AlN grown on a nucleation layer on a sapphire substrate

Applied Physics Express

Volumn 5, Issue 2, 2012, Pages

  Miyagawa, Reina ^a   Yang, Shibo ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Kuwahara, Takaaki ^b   Mitsuhara, Masatoshi ^b   Kuwano, Noriyuki ^b  

^a MIE UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; GROWTH CONDITIONS; HIGH QUALITY; INTERFACE MICROSTRUCTURES; INVERSION DOMAINS; NUCLEATION LAYERS; SAPPHIRE SUBSTRATES;

INTERFACES (MATERIALS); MICROSTRUCTURE; NUCLEATION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

INVERSION LAYERS;

EID: 84863156185     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.025501     Document Type: Article

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