Conductance quantization in a Ag filament-based polymer resistive memory

Nanotechnology

Volumn 24, Issue 33, 2013, Pages

  Gao, Shuang ^a   Zeng, Fei ^a   Chen, Chao ^a   Tang, Guangsheng ^a   Lin, Yisong ^a   Zheng, Zifeng ^a   Song, Cheng ^a   Pan, Feng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

[6 ,6]-PHENYL-C61-BUTYRIC ACID METHYL ESTERS; CONDUCTANCE QUANTIZATION; DISTRIBUTED RESISTANCE; LOW-RESISTANCE STATE; MEMORY APPLICATIONS; QUANTIZED CONDUCTANCE; RESISTIVE SWITCHING; RETENTION PROPERTIES;

HYDROGEN STORAGE; POINT CONTACTS; QUANTUM ELECTRONICS;

SILVER;

EID: 84881125075     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/33/335201     Document Type: Article

References (23)

1. Yang J J, Strukov D B and Stewart D R 2013 Memristive devices for computing Nature Nanotechnol. 8 13-24
2. Lu W, Jeong D S, Kozicki M and Waser R 2012 Electrochemical metallization cells - blending nanoionics into nanoelectronics? Mater. Res. Soc. Bull. 37 124-30
3. Lee T and Chen Y 2012 Organic resistive nonvolatile memory materials Mater. Res. Soc. Bull. 37 144-9
4. Chen G, Song C, Chen C, Gao S, Zeng F and Pan F 2012 Resistive switching and magnetic modulation in cobalt-doped ZnO Adv. Mater. 24 3515-20
5. Song S, Cho B, Kim T W, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H and Lee T 2010 Three-dimensional integration of organic resistive memory devices Adv. Mater. 22 5048-52
6. Liu C L, Kurosawa T, Yu A D, Higashihara T, Ueda M and Chen W C 2011 New dibenzothiophene-containing donor-acceptor polyimides for high-performance memory device applications J. Phys. Chem. C 115 5930-9
7. 2 thin films IEEE Electron Device Lett. 33 1702-4
8. 2 -based ReRAM with a Cu nanocrystal insertion layer IEEE Electron Device Lett. 31 1299-301
9. 2 thin film for multilevel non-volatile memory applications Nanotechnology 21 045202
10. Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Fully room-temperature- tabricated nonvolatile resistive memory for ultrafast and high-density memory application Nano Lett. 9 1636-43
11. Chen C, Yang Y C, Zeng F and Pan F 2010 Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device Appl. Phys. Lett. 97 083502
12. Gao S, Song C, Chen C, Zeng F and Pan F 2012 Dynamic processes of resistive switching in metallic filament-based organic memory devices J. Phys. Chem. C 116 17955-9
13. Gao S, Song C, Chen C, Zeng F and Pan F 2013 Formation process of conducting filament in planar organic resistive memory Appl. Phys. Lett. 102 141606
14. Cho B, Song S, Ji Y, Choi H G, Ko H C, Lee J S, Jung G Y and Lee T 2013 Demonstration of addressable organic resistive memory utilizing a PC-interface memory cell tester IEEE Electron Device Lett. 34 51-3
15. Ohnishi H, Kondo Y and Takayanagi K 1998 Quantized conductance through individual rows of suspended gold atoms Nature 395 780-3 (Pubitemid 28485440)
16. Zhu X J, Su W J, Liu Y W, Hu B L, Pan L, Lu W, Zhang J D and Li R W 2012 Observation of conductance quantization in oxide-based resistive switching memory Adv. Mater. 24 3941-6
17. 5 -based atomic switch Nanotechnology 23 435705
18. Tappertzhofen S, Valov I and Waser R 2012 Quantum conductance and switching kinetics of AgI-based microcrossbar cells Nanotechnology 23 145703
19. 2 /W conductive-bridge memory cells IEEE Electron Device Lett. 33 257-9
20. Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, Petraru A and Hwang C S 2012 Emerging memories: resistive switching mechanisms and current status Rep. Prog. Phys. 75 076502
21. 2/Pt (Jülich: Forschungszentrum Jülich)
22. Kiguchi M, Konishi T, Hasegawa K, Shidara S and Murakoshi K 2008 Three reversible states controlled on a gold monoatomic contact by the electrochemical potential Phys. Rev. B 77 245421
23. Díaz M, Martín-González M S and Costa-Krämer J L 2010 Fractional quantum conductance values in Au nanoelectrodes due to hydrogen adsorption Surf. Sci. 604 1420-4