Functionalized single ZnO-metal junction as a pH sensor

Proceedings of IEEE Sensors

Volumn , Issue , 2013, Pages

  Motto, Paolo ^a   Cauda, Valentina ^b   Stassi, Stefano ^a   Canavese, Giancarlo ^a   Demarchi, Danilo ^a,b  

^a POLITECNICO DI TORINO   (Italy)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROPHORESIS; FIELD EFFECT TRANSISTORS; GOLD; GOLD DEPOSITS; PH; PH SENSORS; SENSITIVITY ANALYSIS; SENSORS; SILICON; SILICON WAFERS; WIRE;

ELECTRONIC SYSTEMS; FUNCTIONAL MOLECULES; FUNCTIONALIZED; GOLD ELECTRODES; IV CHARACTERISTICS; PH VARIATION; SENSITIVITY ENHANCEMENTS; SILICON CHIP;

ZINC OXIDE;

EID: 84893924180     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2013.6688513     Document Type: Conference Paper

References (28)

1. H. Morkoç and Ü. Özgür, Zinc Oxide: Fundamentals, Materials and Device Technology: Wiley-WCH, 2009.
2. Z. L. Wang, "Nanostructures of zinc oxide," Mater. Today 7 26-33, 2004.
3. M. Laurenti, et al., "Wettability control on ZnO nanowires driven by seed layer properties," Eur. J. Inorg. Chem. 2013, pp. 2520-2527, 2013.
4. M. Law, et al., "Nanowire dye-sensitized solar cells," Nat. Mater. 4 455-459, 2005.
5. Z. L. Wang, "ZnO nanowire and nanobelt platform for nanotechnology," Materials Science and Engineering: R: Reports 64 33-71, 2009.
6. V. F. Rivera, et al., "Length-dependent charge generation from vertical arrays of high-Aspect ratio ZnO nanowires," Chem. Eur. J. doi: 10.1002/chem.201204429, 2013.
7. M. S. Arnold, et al., "Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts," J. Phys. Chem. B 107 659-663, 2003.
8. D. Calestani, et al., "Growth of ZnO tetrapods for nanostructurebased gas sensors," Sens. Actuators, B 144, pp. 472-478, 2010.
9. A. V. Desai and M. A. Haque, "Mechanical properties of ZnO nanowires.," Sens. Actuators, A 134 169-176, 2007.
10. J. Gomez and O. Tigli, "Zinc oxide nanostructures: from growth to application," J. Mater. Sci. 48 612-624, 2013.
11. P.-C. Chang and J. G. Lu, "ZnO Nanowire Field-Effect Transistors," IEEE T. Electron Dev. 55 2977-2987, 2008.
12. W. I. Park, et al., "Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors," Appl. Phys. Lett. 85 5052-5054, 2004.
13. H. T. Ng, et al., "Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor," Nano Lett. 4 1247-1252, 2004.
14. D. E. Yales, et al., "Site-binding model of the electrical double layer at the oxide/water interface," J. Chem. Soc., Faraday Trans. 70, pp. 1807-1818, 1974.
15. W. M. Siu and R. S. C. Collold, "Basic properties of the electrolyte-SiO2-Si system: Physical and theoretical aspects " IEEE Trans. Electron Dev. 26, pp. 1805-1815, 1979.
16. B. S. Kang, et al., "pH measurements with single ZnO nanorods integrated with a microchannel," Appl. Phys. Lett. 86, p. 112105, 2005.
17. M. Manzano, et al., "Studies on MCM-41 mesoporous silica for drug delivery: Effect of particle morphology and amine functionalization," Chem. Eng. J. 137 30-37, 2008.
18. C. Argyo, et al., "Heparin-Coated Colloidal Mesoporous Silica Nanoparticles Efficiently Bind to Antithrombin as an Anticoagulant Drug-Delivery System," Chem. Eur. J. 18, pp. 428-432, 2012.
19. J. H. Clark and D. J. Macquarrie, "Catalysis of liquid phase organic reactions using chemicallymodified mesoporous inorganic solids," Chem. Commun., pp. 853-860, 1998.
20. A. Sayari and S. Hamoudi, "Periodic Mesoporous Silica-Based Organic-Inorganic Nanocomposite Materials," Chem. Mater. 13 3151-3168, 2001.
21. A. R. Morrill, et al., "Imaging 3-Aminopropyltriethoxysilane selfassembled monolayers on nanostructured titania and tin (IV) oxide nanowires using colloidal silver nanoparticles," Chem. Phys. Lett. 473, pp. 116-119, 2009.
22. P. Chen, et al., "Facile synthesis of highly uniform ZnO multipods as the supports of Au and Ag nanoparticles," Mater. Chem. Phys. 122, pp. 41-48, 2010.
23. D. Demarchi, et al., "Electrothermal modelling for EIBJ nanogap fabrication," Electrochim. Acta 54, pp. 6003-6009, 2009.
24. P. Motto, et al., "Nanogap structures for molecular nanoelectronics," Nanoscale Res. Lett. 7, pp. 113-120, 2012.
25. I. Rattalino, et al., Phys. Lett. A, vol 376, pp. 2134-2140, 2012.
26. S. N. Cha, et al., "High performance ZnO nanowire field effect transistor using self-Aligned nanogap gate electrodes," Appl. Phys. Lett., vol 89, pp. 263102/1-263102/3, 2006.
27. J.-H. Ahn, et al., "Double-gate nanowire field effect transistor for a biosensor," Nano Lett., vol 10, pp. 2934-2938, 2010.
28. M. Masahara, et al., "Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs," IEEE Trans. Electron Device vol. 52, pp. 2046-2053, 2005.