Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection

Journal of Communications and Networks

Volumn 15, Issue 6, 2013, Pages 559-568

  Blin, Stephane ^a   Tohme, Lucie ^a   Coquillat, Dominique ^a   Horiguchi, Shogo ^b   Minamikata, Yusuke ^b   Hisatake, Shintaro ^b   Nouvel, Philippe ^a   Cohen, Thomas ^a   Penarier, Annick ^a   Cano, Fabrice ^a   Varani, Luca ^a   Knap, Wojciech ^a   Nagatsuma, Tadao ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Communications technology; FET; HEMT; plasma waves; receivers; THz

Indexed keywords

ERRORS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; PHOTODIODES; PLASMA WAVES; SEMICONDUCTING GALLIUM; TERAHERTZ WAVES;

BIT-ERROR RATE; COMMUNICATIONTECHNOLOGY; DATA-RATE; FIELD-EFFECT TRANSISTOR; GAAS/ALGAAS; HIGH ELECTRON-MOBILITY TRANSISTORS; POWER; RECEIVER; TERA HERTZ; WIRELESS COMMUNICATIONS;

BIT ERROR RATE;

EID: 84893394137     PISSN: 12292370     EISSN: None     Source Type: Journal    
DOI: 10.1109/JCN.2013.000104     Document Type: Article

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