Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7311, Issue , 2009, Pages

  Muravjov, A V ^a   Veksler, D B ^a   Hu, X ^b   Gaska, R ^b   Pala, N ^c   Saxena, H ^d   Peale, R E ^d   Shur, M S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c The Department of Electrical and Computer Engineering   (United States)

^d UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

Grating gate devices; Plasma wave electronics; Plasmonic crystals; Plasmons; Terahertz detectors

Indexed keywords

2D ELECTRON GAS; ALGAN/GAN HEMTS; CRYOGENIC TEMPERATURES; FREQUENCY DISPERSION; GAN HEMTS; GATE ELECTRODES; GATE VOLTAGES; GRATING-GATE DEVICES; LATTICE VECTORS; METAL GRATING; ON CHIPS; PLASMONIC CRYSTALS; RESONANCE FREQUENCIES; RESONANT ABSORPTION; RESONANT DETECTION; TERA HERTZ; TERAHERTZ ABSORPTION; TERAHERTZ DETECTORS; TERAHERTZ RADIATION; TERAHERTZ SPECTROSCOPY; TRANSMISSION SPECTRUMS; WAVE VECTOR;

CRYSTALS; ELECTRIC CONDUCTIVITY OF GASES; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE EMISSION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; GAS ABSORPTION; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETOHYDRODYNAMICS; PLASMA WAVES; PLASMAS; RESONANCE; SEMICONDUCTING GALLIUM;

PLASMONS;

EID: 69649097612     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.818726     Document Type: Conference Paper

References (8)

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