Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes

Electronics Letters

Volumn 48, Issue 10, 2012, Pages 582-583

  Ishigaki, K ^a   Shiraishi, M ^a   Suzuki, S ^a   Asada, M ^a   Nishiyama, N ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE SHIFT KEYING; BIT RATES; DIRECT INTENSITY MODULATION; EXTERNAL CIRCUITS; MODULATION FREQUENCIES; PARASITIC ELEMENT; WIRELESS DATA TRANSMISSION;

CUTOFF FREQUENCY; MODULATION;

DATA COMMUNICATION SYSTEMS;

EID: 84861302983     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.0849     Document Type: Article

References (6)

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2. Song, H., and Nagatsuma, T.: ' Present and future of terahertz communications ', IEEE Trans. Terahz. Sci. Technol., 2011, 1, (1), p. 256-263 10.1109/TTHZ.2011.2159552
3. Feiginov, M., Sydlo, C., Cojocari, O., and Meissner, P.: ' Resonant-tunneling-diode oscillators operating at frequencies above 1.1 THz ', Appl. Phys. Lett., 2011, 99, p. 233506 10.1063/1.3667191 0003-6951
4. Suzuki, S., Asada, M., Teranishi, A., Sugiyama, H., and Yokoyama, H.: ' Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature ', Appl. Phys. Lett., 2010, 97, p. 242102 10.1063/1.3525834 0003-6951
5. Shiraishi, M., Shibayama, H., Ishigaki, K., Suzuki, S., Asada, M., Sugiyama, H., and Yokoyama, H.: ' High output power (∼400W) oscillators at around 550GHz using resonant tunneling diodes with graded emitter and thin barriers ', Appl. Phys. Express, 2011, 4, p. 064101 10.1143/APEX.4.064101
6. Asada, M., Suzuki, S., and Kishimoto, N.: ' Resonant tunneling diodes for sub-terahertz and terahertz oscillators ', Jpn. J. Appl. Phys., 2008, 47, (6), p. 4375-4384 10.1143/JJAP.47.4375 0021-4922