Nanowire-based field effect transistors for terahertz detection and imaging systems

Nanotechnology

Volumn 24, Issue 21, 2013, Pages

  Romeo, L ^a   Coquillat, D ^b   Pea, M ^a   Ercolani, D ^a   Beltram, F ^a   Sorba, L ^a   Knap, W ^b   Tredicucci, A ^a   Vitiello, M S ^a  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY MODULATION; DETECTION PERFORMANCE; FIELD EFFECT TRANSISTOR (FETS); OPTIMIZED PERFORMANCE; RELIABILITY AND SENSITIVITY; SELF ASSEMBLED NANOSTRUCTURES; SEMICONDUCTOR NANOWIRE; TRANSMISSION IMAGING;

ELECTRIC FIELDS; ELECTROMAGNETIC WAVES; FIELD EFFECT TRANSISTORS; IMAGING SYSTEMS; NANOWIRES; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; TERAHERTZ WAVES;

TERAHERTZ WAVE DETECTORS;

NANOWIRE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION DOSE; RADIATION EXPOSURE; SEMICONDUCTOR; TERAHERTZ IMAGING; TERAHERTZ RADIATION; TERAHERTZ SPECTROSCOPY; TRANSDUCER;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; RADIATION DOSAGE; TERAHERTZ IMAGING; TERAHERTZ RADIATION; TERAHERTZ SPECTROSCOPY; TRANSDUCERS; TRANSISTORS, ELECTRONIC;

EID: 84876817509     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/21/214005     Document Type: Article

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